Name: Atomic and Electronic Properties of 2D Moiré Interfaces (en Inglés)
Price: 284960.00 CLP
Availability: InStock
Author: Weston, Astrid
ISBN: 9783031120923

portada Atomic and Electronic Properties of 2D Moiré Interfaces (en Inglés)

Formato

Libro Físico

Autor

Astrid Weston

Editorial

Springer

Idioma

Inglés

N° páginas

140

Encuadernación

Tapa Dura

Dimensiones

23.6 x 15.8 x 1.4 cm

Peso

0.41 kg.

ISBN13

9783031120923

Categorías

Física óptica
Química analítica
Ingeniería aplicada de revestimientos de superficies, capas y películas

Atomic and Electronic Properties of 2D Moiré Interfaces (en Inglés)

Astrid Weston (Autor) · Springer · Tapa Dura

Libro Físico

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Origen: Estados Unidos (Costos de importación incluídos en el precio)

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Reseña del libro "Atomic and Electronic Properties of 2D Moiré Interfaces (en Inglés)"

This thesis provides the first atomic length-scale observation of the structural transformation (referred to as lattice reconstruction) that occurs in moiré superlattices of twisted bilayer transition metal dichalcogenides (TMDs) at low (θ Studies using Scanning transmission electron microscopy (STEM), a powerful tool for atomic-scale imaging, were limited due to the complexity of the (atomically-thin) sample fabrication requirements. This work developed a unique way to selectively cut and re-stack monolayers of TMDs with a controlled rotational twist angle which could then be easily suspended on a TEM grid to meet the needs of the atomically thin sample requirements. The fabrication technique enabled the study of the two common stacking-polytypes including 3R and 2H (using MoS2 and WS2 as the example) as well as their structural evolution with decreasing twist-angle.Atomic-scale studies were followed by a comprehensive investigation of their electronic properties using scanning probe microscopy and electrical transport measurements of the artificially-engineered structures. The electronic structure of two common stacking-polytypes (3R and 2H) were strikingly different, as revealed by conductive atomic force microscopy. Further studies focused on the 3R-stacking polytype to reveal room-temperature out-of-plane ferroelectricity using tools such as kelvin probe force microscopy, scanning electron microscopy and electrical transport measurements. This work highlights that the unique intrinsic properties of TMDs (i.e. semiconductors with strongly light-matter interaction) combined with the additional twisted degree-of-freedom has great potential to create atomically thin transistors/LEDs with built-in memory storage functions and will further aid in the development of the next generation of optoelectronics.