Name: Gallium Nitride-Enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems) (en Inglés)
Price: 236260.00 CLP
Availability: InStock
Author: Meneghesso Gaudenzio; Meneghini Matteo; Zanoni Enrico (Eds.)
ISBN: 9783319779935

portada Gallium Nitride-Enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems) (en Inglés)

Formato

Libro Físico

Editorial

Springer

Autor

Meneghesso Gaudenzio; Meneghini Matteo; Zanoni Enrico (Eds.)

Idioma

Inglés

N° páginas

245

Encuadernación

Tapa Dura

ISBN13

9783319779935

N° edición

Gallium Nitride-Enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems) (en Inglés)

Meneghesso Gaudenzio; Meneghini Matteo; Zanoni Enrico (Eds.) (Autor) · Springer · Tapa Dura

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Reseña del libro "Gallium Nitride-Enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems) (en Inglés)"

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies.