Compartir
Hierarchy of Semiconductor Equations: Relaxation Limits with Initial Layers for Large Initial Data (en Inglés)
Shinya Nishibata
(Autor)
·
Masahiro Suzuki
(Autor)
·
Mathematical Society of Japan
· Tapa Blanda
Hierarchy of Semiconductor Equations: Relaxation Limits with Initial Layers for Large Initial Data (en Inglés) - Nishibata, Shinya ; Suzuki, Masahiro
$ 29.950
$ 49.920
Ahorras: $ 19.970
Elige la lista en la que quieres agregar tu producto o crea una nueva lista
✓ Producto agregado correctamente a la lista de deseos.
Ir a Mis Listas
Origen: Reino Unido
(Costos de importación incluídos en el precio)
Se enviará desde nuestra bodega entre el
Miércoles 24 de Julio y el
Viernes 02 de Agosto.
Lo recibirás en cualquier lugar de Chile entre 1 y 3 días hábiles luego del envío.
Reseña del libro "Hierarchy of Semiconductor Equations: Relaxation Limits with Initial Layers for Large Initial Data (en Inglés)"
This volume provides a recent study of mathematical research on semiconductor equations. With recent developments in semiconductor technology, several mathematical models have been established to analyze and to simulate the behavior of electron flow in semiconductor devices. Among them, a hydrodynamic, an energy-transport and a drift-diffusion models are frequently used for the device simulation with the suitable choice, depending on the purpose of the device usage. Hence, it is interesting and important not only in mathematics but also in engineering to study a model hierarchy, relations among these models. The model hierarchy has been formally understood by relaxation limits letting the physical parameters, called relaxation times, tend to zero. The main concern of this volume is the mathematical justification of the relaxation limits. Precisely, we show that the time global solution for the hydrodynamic model converges to that for the energy-transport model as a momentum relaxation time tends to zero. Moreover, it is shown that the solution for the energy-transport model converges to that for the drift-diffusion model as an energy relaxation time tends to zero. For beginners' help, this volume also presents the physical background of the semiconductor devices, the derivation of the models, and the basic mathematical results such as the unique existence of time local solutions.Published by Mathematical Society of Japan and distributed by World Scientific Publishing Co. for all markets
- 0% (0)
- 0% (0)
- 0% (0)
- 0% (0)
- 0% (0)
Todos los libros de nuestro catálogo son Originales.
El libro está escrito en Inglés.
La encuadernación de esta edición es Tapa Blanda.
✓ Producto agregado correctamente al carro, Ir a Pagar.
