Name: Impact of the domain structure in ferroelectric substrate on graphene (en Inglés)
Price: 63060.00 CLP
Availability: InStock
Author: Strikha, Maksym ; Kurchak, Anatolii ; Morozovska, Anna
ISBN: 9786134909099

portada Impact of the domain structure in ferroelectric substrate on graphene (en Inglés)

Formato

Libro Físico

Autor

Maksym Strikha

Anatolii Kurchak

Anna Morozovska

Editorial

LAP Lambert Academic Publishing

Idioma

Inglés

N° páginas

Encuadernación

Tapa Blanda

Dimensiones

22.9 x 15.2 x 0.4 cm

Peso

0.10 kg.

ISBN13

9786134909099

Categorías

Física

Impact of the domain structure in ferroelectric substrate on graphene (en Inglés)

Maksym Strikha (Autor) · Anatolii Kurchak (Autor) · Anna Morozovska (Autor) · LAP Lambert Academic Publishing · Tapa Blanda

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Origen: Estados Unidos (Costos de importación incluídos en el precio)

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Reseña del libro "Impact of the domain structure in ferroelectric substrate on graphene (en Inglés)"

This book is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresis memory effect in a field effect transistor based on graphene-on-ferroelectric, taking into account absorbed dipole layers on the free surface of graphene and localized states on its interfaces is considered. The aspects of the recently developed theory of p-n junctions conductivity in a graphene channel on a ferroelectric substrate, which are created by a 180-degree ferroelectric domain structure, are analyzed, and cases of different current regimes from ballistic to diffusion one are considered. The influence of size effects in such systems and the possibility of using the results for improving the characteristics of field effect transistors with a graphene channel, non-volatile ferroelectric memory cells with random access, sensors, as well as for miniaturization of various devices of functional nanoelectronics are discussed.